A model of CMP - III. Inhibitors

被引:20
|
作者
Paul, E [1 ]
Vacassy, R
机构
[1] Stockton Coll, Pomona, NJ 08240 USA
[2] Cabot Microelect, Aurora, IL 60504 USA
关键词
D O I
10.1149/1.1621419
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A model of chemical mechanical polishing (CMP), based on a steady-state balance between chemical growth kinetics for a surface film and its mechanical removal rates, is extended to include the effects of inhibitors on the polishing rate. The general case provides qualitative insights into the process and presents a quantitative measure of inhibitor effectiveness. The model is applied to the case of tungsten CMP, with modifications in some details based on the complexity of the tungsten oxide surface film. The model is used to interpret data for three inhibitors in four slurry formulations and to explain their qualitatively different behaviors. (C) 2003 The Electrochemical Society.
引用
收藏
页码:G739 / G743
页数:5
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