Pressure dependence of the dielectric and optical properties of wide-gap semiconductors

被引：66
|
作者：
Davydov, SY [1 ]
Tikhonov, SK [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 09期
关键词：
D O I：
10.1134/1.1187520
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Harrison bond-orbital model is used to derive expressions for the pressure dependence of the static dielectric constant epsilon(0) and rf dielectric constant epsilon(infinity) and also the longitudinal omega(LO) (0) and transverse omega(TO) (0) optical frequencies of the wide-gap semiconductors 3C-SiC, BN, AlN, and GaN. (C) 1998 American Institute of Physics. [S1063-7826(98)00809-6].
引用
收藏
页码：947 / 949
页数：3
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