A Si Optical Modulator Based on Fano-Like Resonance

被引：6
|
作者：
Du, H. [1 ]
Zhang, W. [1 ]
Cao, W. [1 ]
Thomson, D. J. [1 ]
Littlejohns, C. G. [1 ]
Yan, X. [1 ]
Tran, D. T. [1 ]
Banakar, M. [1 ]
Reed, G. T. [1 ]
机构：
[1] Univ Southampton, Zepler Inst Photon & Nanoelect, Southampton SO17 1BJ, Hants, England
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2021年 / 33卷 / 21期
基金：
英国工程与自然科学研究理事会;
关键词：
Modulation; Optical waveguides; Optical modulation; Optical ring resonators; Shape; Optical device fabrication; Optical devices; Si optical modulator; Fano-like resonance; carrier depletion modulation; RACETRACK RESONATOR; HIGH-SPEED; SILICON;
D O I：
10.1109/LPT.2021.3114384
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we present an experimental demonstration of a Si optical modulator based on Fano-like resonance, which is the first of its kind in the literature. The Fano-like resonance is obtained through weak coupling between two optical resonators in the prototype device and a PN junction is designed for carrier-depletion type electro-refractive modulation. 20 Gb/s data rate on-off keying (OOK) is obtained experimentally on the prototype device. Compared with a ring resonator modulator with a similar optical resonance linewidth, a Fano-like resonance based modulator can potentially have a higher extinction ratio (ER) because the Fano-like resonance has an asymmetric spectrum line shape and the line shape on one side can be sharper than the Lorentz resonance line shape of a ring resonator.
引用
收藏
页码：1209 / 1212
页数：4
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