A Si Optical Modulator Based on Fano-Like Resonance

被引：6

作者：

Du, H. ^{[1
]}

Zhang, W. ^{[1
]}

Cao, W. ^{[1
]}

Thomson, D. J. ^{[1
]}

Littlejohns, C. G. ^{[1
]}

Yan, X. ^{[1
]}

Tran, D. T. ^{[1
]}

Banakar, M. ^{[1
]}

Reed, G. T. ^{[1
]}

机构：

[1] Univ Southampton, Zepler Inst Photon & Nanoelect, Southampton SO17 1BJ, Hants, England

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2021年 / 33卷 / 21期

基金：

英国工程与自然科学研究理事会;

关键词：

Modulation; Optical waveguides; Optical modulation; Optical ring resonators; Shape; Optical device fabrication; Optical devices; Si optical modulator; Fano-like resonance; carrier depletion modulation; RACETRACK RESONATOR; HIGH-SPEED; SILICON;

D O I：

10.1109/LPT.2021.3114384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present an experimental demonstration of a Si optical modulator based on Fano-like resonance, which is the first of its kind in the literature. The Fano-like resonance is obtained through weak coupling between two optical resonators in the prototype device and a PN junction is designed for carrier-depletion type electro-refractive modulation. 20 Gb/s data rate on-off keying (OOK) is obtained experimentally on the prototype device. Compared with a ring resonator modulator with a similar optical resonance linewidth, a Fano-like resonance based modulator can potentially have a higher extinction ratio (ER) because the Fano-like resonance has an asymmetric spectrum line shape and the line shape on one side can be sharper than the Lorentz resonance line shape of a ring resonator.

引用

页码：1209 / 1212

页数：4

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