Investigation of carrier-induced defect behavior in p-type multi-crystalline silicon

被引：0

作者：

Chan, Catherine E. ^{[1
]}

Fung, Tsun H. ^{[1
]}

Payne, David N. R. ^{[1
]}

Chen, Daniel ^{[1
]}

Abbott, Malcolm D. ^{[1
]}

Ciesla, Alison M. ^{[1
]}

Chen, Ran ^{[1
]}

Hallam, Brett J. ^{[1
]}

Wenham, Stuart R. ^{[1
]}

机构：

[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年

关键词：

LIGHT-INDUCED DEGRADATION; MULTICRYSTALLINE SILICON;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The underlying mechanism behind carrier-induced degradation in multi-crystalline silicon (mc-Si) solar cells remains unknown, however clues can be gained through studies of the behavior of the defect/s in response to different processing steps. Recently, surprisingly significant changes to the kinetics of the defect/s after low-temperature dark annealing have been observed for mc-Si PERC cells. In this study we apply the same processes to symmetrical lifetime test structures to validate that these changes to the kinetics are indeed caused by changes in the bulk of the wafers.

引用

页码：2576 / 2581

页数：6

共 50 条

[41] DEFECT LEVELS IN P-TYPE SILICON DOPED WITH MANGANESE
EVWARAYE, AO
JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3813 - 3818
[42] Defect-induced Stress Imaging in Single and Multi-crystalline Semiconductor Materials
Herms, Martin
Wagner, Matthias
Kayser, Stefan
Kiessling, Frank M.
Poklad, Anna
Zhao, Ming
Kretzer, Ulrich
MATERIALS TODAY-PROCEEDINGS, 2018, 5 (06) : 14748 - 14756
[43] Investigation on influence of dimensionless numbers in molten silicon during multi-crystalline silicon growth process
Srinivasan, M.
Ramasamy, P.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2016, 18 (3-4): : 315 - 321
[44] Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon
Sun, Chang
Rougieux, Fiacre E.
Macdonald, Daniel
JOURNAL OF APPLIED PHYSICS, 2014, 115 (21)
[45] Investigation of p-type macroporous silicon formation
Lévy-Clément, C
Lust, S
Mamor, M
Rappich, J
Dittrich, T
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (08): : 1390 - 1395
[46] Amorphous silicon p-type crystalline silicon heterojunction solar cells
Jagannathan, B
Anderson, WA
Coleman, J
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 46 (04) : 289 - 310
[47] An experimental investigation into the micro-electrodischarge machining behavior of p-type silicon
Jahan, Muhammad Pervej
Lieh, T. W.
Wong, Yoke San
Rahman, Mustafizur
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2011, 57 (5-8): : 617 - 637
[48] An experimental investigation into the micro-electrodischarge machining behavior of p-type silicon
Muhammad Pervej Jahan
T. W. Lieh
Yoke San Wong
Mustafizur Rahman
The International Journal of Advanced Manufacturing Technology, 2011, 57 : 617 - 637
[49] Detection of Potential Induced Degradation in mono and multi-crystalline silicon photovoltaic modules
Kwembur, I. M.
McCleland, J. L. Crozier
van Dyk, E. E.
Vorster, F. J.
PHYSICA B-CONDENSED MATTER, 2020, 581
[50] Porous silicon Bragg reflectors on multi-crystalline silicon wafer with p-n junction
Ivanov, I. I.
Skryshevsky, V. A.
Kyslovets, O. S.
Nychyporuk, T.
Lemiti, M.
INTERNATIONAL CONFERENCE ON MICROTECHNOLOGY AND THERMAL PROBLEMS IN ELECTRONICS (MICROTHERM'2015) AND INTERNATIONAL CONFERENCE ON SMART ENGINEERING OF NEW MATERIALS (SENM'2015), 2016, 709

← 1 2 3 4 5 →