Investigation of carrier-induced defect behavior in p-type multi-crystalline silicon

被引：0

作者：

Chan, Catherine E. ^{[1
]}

Fung, Tsun H. ^{[1
]}

Payne, David N. R. ^{[1
]}

Chen, Daniel ^{[1
]}

Abbott, Malcolm D. ^{[1
]}

Ciesla, Alison M. ^{[1
]}

Chen, Ran ^{[1
]}

Hallam, Brett J. ^{[1
]}

Wenham, Stuart R. ^{[1
]}

机构：

[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年

关键词：

LIGHT-INDUCED DEGRADATION; MULTICRYSTALLINE SILICON;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The underlying mechanism behind carrier-induced degradation in multi-crystalline silicon (mc-Si) solar cells remains unknown, however clues can be gained through studies of the behavior of the defect/s in response to different processing steps. Recently, surprisingly significant changes to the kinetics of the defect/s after low-temperature dark annealing have been observed for mc-Si PERC cells. In this study we apply the same processes to symmetrical lifetime test structures to validate that these changes to the kinetics are indeed caused by changes in the bulk of the wafers.

引用

页码：2576 / 2581

页数：6

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