INDUCTIVELY COUPLED PLASMA ETCHING OF BULK TUNGSTEN FOR MEMS APPLICATIONS

被引：0
|
作者：
Song, Lu
Li, Nannan
Zhang, Shibin
Luo, Jin
Hu, Jia
Zhang, Yiming
Chen, Shuhui
Chen, Jing
机构：
来源：
2014 IEEE 27TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2014年
关键词：
TITANIUM;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tungsten based MEMS devices have the potential to be used for many applications, such as tools for micro electrical discharge machining and ultrasonic machining, or mold for inject molding. For the first time, bulk tungsten inductively coupled plasma (ICP) etching was developed and characterized, which is capable of producing high aspect ratio (>13) structures with feature size below 3 mu m. Etching depth of 230 mu m has been achieved at an etch rate up to 2.2 mu m/min. This technology offers big opportunities for MEMS applications.
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收藏
页码：502 / 505
页数：4
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