Scaling at the metal-insulator transition in two dimensions

被引：19
|
作者：
Abrahams, E [1 ]
机构：
[1] Rutgers State Univ, Serin Phys Lab, Piscataway, NJ 08854 USA
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 1998年 / 3卷 / 1-3期
基金：
美国国家科学基金会;
关键词：
metal-insulator transition; two-dimensional electron gas;
D O I：
10.1016/S1386-9477(98)00220-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The recently discovered two-dimensional metal-insulator transition will be reviewed and discussed in the light of the scaling theory of localization. It will be shown that an observed symmetry relating conductivity and resistivity follows directly from the critical behavior associated with such a transition. The status of both Fermi-liquid and non-Fermi-liquid approaches will be discussed. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：69 / 78
页数：10
相关论文
共 50 条
  • [31] TUNNELING AND HOPPING BETWEEN DOMAINS IN THE METAL-INSULATOR TRANSITION IN TWO-DIMENSIONS
    Neilson, David
    Hamilton, Alex
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2008, 22 (25-26): : 4565 - 4571
  • [32] Hidden scaling in the quantum Hall metal-insulator transition
    Moriconi, L
    Pereira, ALC
    Schulz, PA
    PHYSICAL REVIEW B, 2004, 69 (04)
  • [33] Scaling of the Level Compressibility at the Anderson Metal-Insulator Transition
    Ndawana, Macleans L.
    Roemer, Rudolf A.
    Schreiber, Michael
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2003, 72
  • [34] TUNNELING AND HOPPING BETWEEN DOMAINS IN THE METAL-INSULATOR TRANSITION IN TWO-DIMENSIONS
    Neilson, David
    Hamilton, Alex
    CONDENSED MATTER THEORIES, VOL 23, 2009, : 277 - +
  • [35] Two interacting particles at a metal-insulator transition
    Eilmes, A
    Grimm, U
    Römer, RA
    Schreiber, M
    EUROPEAN PHYSICAL JOURNAL B, 1999, 8 (04): : 547 - 554
  • [36] Two interacting particles at a metal-insulator transition
    A. Eilmes
    U. Grimm
    R.A. Römer
    M. Schreiber
    The European Physical Journal B - Condensed Matter and Complex Systems, 1999, 8 : 547 - 554
  • [37] Scaling and the metal-insulator transition in Si/SiGe quantum wells
    Lam, J
    DIorio, M
    Brown, D
    Lafontaine, H
    PHYSICAL REVIEW B, 1997, 56 (20): : 12741 - 12743
  • [38] Scaling of terahertz conductivity at the metal-insulator transition in doped manganites
    Pimenov, A
    Biberacher, M
    Ivannikov, D
    Loidl, A
    Mukhin, AA
    Goncharov, YG
    Balbashov, AM
    PHYSICAL REVIEW B, 2006, 73 (22):
  • [39] Conducting polymers near metal-insulator transition: Scaling and criticality
    Mohan, Arya
    Menon, Reghu
    PHYSICA B-CONDENSED MATTER, 2023, 655
  • [40] Quantum-critical conductivity scaling for a metal-insulator transition
    Lee, HL
    Carini, JP
    Baxter, DV
    Henderson, W
    Grüner, G
    SCIENCE, 2000, 287 (5453) : 633 - 636
12345