Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions -: art. no. 111105

被引：66
|
作者：
Löffler, A
Reithmaier, JP
Sek, G
Hofmann, C
Reitzenstein, S
Kamp, M
Forchel, A
机构：
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 11期
关键词：
D O I：
10.1063/1.1880446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vertical-emitting AlAs/GaAs microcavity pillars with a type of GaInAs quantum dots within a one lambda cavity have been realized based on high reflectivity distributed Bragg reflectors. High-quality factors were achieved due to an improved fabrication technology with a maximum quality factor of 27 700 for a micropillar with a diameter of 4 mu m. The dot dimensions could be enlarged by one order of magnitude using a low strain Ga0.7In0.3As nucleation layer. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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