Optically pumped intersublevel midinfrared lasers, based on InAs-GaAs quantum dots

We propose an optically pumped laser based on intersublevel transitions in InAs-GaAs pyramidal self-Assembled quantum dots. A theoretical rate equations model of the laser is given in order to predict the dependence of the gain on pumping flux and temperature. The energy levels and wave functions were calculated using the 8-band k (.) p method where the symmetry of the pyramid was exploited to reduce the computational complexity. Carrier dynamics in the laser were modeled by taking both electron-longitudinal optical phonon and electron-longitudinal acoustic phonon interactions into account. The proposed laser emits at 14.6 mu m with a gain of g approximate to 570 cm(-1) at the pumping flux Phi = 10(24) cm(-2) s(-1) and a temperature of T = 77 K. By varying the size of the investigated dots, laser emission in the spectral range 13-21 mu m is predicted. In comparison to optically pumped lasers based on quantum wells, an advantage of the proposed type of laser is a lower pumping flux, due to the longer carrier lifetime in quantum dots, and also that both surface and edge emission are possible. The appropriate waveguide and cavity designs are presented, and by comparing the calculated values of the gain with the estimated losses, lasing is predicted even at room temperature for all the quantum dots investigated.