Continuous wavelength modulation of semi-polar plane InGaN/GaN MQWs based on vapor-phase-diffusion-based selective-area pyramidal growth

被引：2

作者：

Fujiwara, Tatsuki ^{[1
]}

Nakano, Yoshiaki ^{[2
]}

Sugiyama, Masakazu ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Elect Engn & Informat Syst, Tokyo 1130034, Japan

[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1130034, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 05期

关键词：

MOVPE; nitride semiconductor; selective-area growth; semi-polar;

D O I：

10.1002/pssa.201000942

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have achieved continuous wavelength modulation from InGaN quantum wells on semi-polar {11-22} planes with selective-area growth of hexagonal pyramids with varied widths of masks surrounding them. The thickness of InGaN wells on the surface of the pyramids was tailored by the mask width, which led to wavelength modulation. The use of semi-polar planes reduced quantum confined stark effect, allowing a wider range of wavelength modulation: from 446 to 500 nm as measured by cathode luminescence. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1203 / 1205

页数：3

共 8 条

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