Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates

被引：13

作者：

Bengoechea-Encabo, A. ^{[1
,2
]}

Albert, S. ^{[1
,2
]}

Zuniga-Perez, J. ^{[3
]}

de Mierry, P. ^{[3
]}

Trampert, A. ^{[4
]}

Barbagini, F. ^{[1
,2
]}

Sanchez-Garcia, M. A. ^{[1
,2
]}

Calleja, E. ^{[1
,2
]}

机构：

[1] Univ Politecn Madrid, ISOM, E-28040 Madrid, Spain

[2] Univ Politecn Madrid, Dept Ingn Elect, ETSI Telecomunicac, E-28040 Madrid, Spain

[3] CRHEA CNRS, F-06560 Valbonne, France

[4] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 24期

关键词：

STACKING-FAULTS; NITRIDE; EPITAXY;

D O I：

10.1063/1.4846455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11-22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes. (C) 2013 AIP Publishing LLC.

引用

页数：3

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