Exciton-exciton interaction in transition-metal dichalcogenide monolayers

被引:92
|
作者
Shahnazaryan, V. [1 ,2 ,3 ]
Iorsh, I. [2 ]
Shelykh, I. A. [1 ,2 ]
Kyriienko, O. [4 ]
机构
[1] Univ Iceland, Sci Inst, IS-107 Reykjavik, Iceland
[2] ITMO Univ, St Petersburg 197101, Russia
[3] Russian Armenian Slavon Univ, Yerevan 0051, Armenia
[4] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark
关键词
ELECTRONIC-STRUCTURE; FINE-STRUCTURE; SEMICONDUCTOR; BIEXCITONS; SCATTERING; DYNAMICS; WS2;
D O I
10.1103/PhysRevB.96.115409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study theoretically the Coulomb interaction between excitons in transition metal dichalcogenide ( TMD) monolayers. We calculate direct and exchange interaction for both ground and excited states of excitons. The screening of the Coulomb interaction, specific to monolayer structures, leads to the unique behavior of the exciton-exciton scattering for excited states, characterized by the nonmonotonic dependence of the interaction as function of the transferred momentum. We find that the nontrivial screening enables the description of TMD exciton interaction strength by approximate formula which includes exciton binding parameters. The influence of screening and dielectric environment on the exciton-exciton interaction was studied, showing qualitatively different behavior for ground state and excited states of excitons. Furthermore, we consider exciton-electron interaction, which for the excited states is governed by the dominant attractive contribution of the exchange component, which increases with the excitation number. The results provide a quantitative description of the exciton-exciton and exciton-electron scattering in transition metal dichalcogenides, and are of interest for the design of perspective nonlinear optical devices based on TMD monolayers.
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页数:9
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