Amorphous As-S-Se semiconductor thin films for holography and lithography

被引：1

作者：

Kolbjonoks, Vadims ^{[1
]}

Gerbreders, Vjaceslavs ^{[1
]}

Teteris, Janis ^{[1
]}

Bulanovs, Andrejs ^{[1
]}

机构：

[1] Daugavpils Univ, IMC, Parades 1, LV-5401 Daugavpils, Latvia

来源：

HOLOGRAPHY: ADVANCES AND MODERN TRENDS II | 2011年 / 8074卷

关键词：

Chalcogenides; amorphous thin films; electron beam lithography;

D O I：

10.1117/12.886837

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Electron beam (EB) induced changes in thin films of the amorphous chalcogenide semiconductors As-S-Se have been studied. The experimental results on patterning of As-S-Se film surfaces by EB exposure and following chemical etching are presented. The possibilities of practical application of this material as resists for the production of relief holograms and diffractive optical elements (DOE) are discussed.

引用

页数：7

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