Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation

被引：0

作者：

Jun, Myungsim ^{[1
]}

Park, Youngsam ^{[1
]}

Hyun, Younghoon ^{[1
]}

Choi, Sung-Jin ^{[2
]}

Zyung, Taehyung ^{[1
]}

Jang, Moongyu ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst ETRI, Power Control Device Team, Taejon 305700, South Korea

[2] Korea Adv Inst Sci & Technol, Div Elect Engn, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 08期

关键词：

Nickel Silicide; Sb Segregation; Schottky Barrier Height; SCHOTTKY; TRANSISTORS;

D O I：

10.1166/jnn.2011.4851

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper, n/p-type nickel-silicided Schottky diodes were fabricated by incorporating antimony atoms near the nickel silicide/Si junction interface and the electrical characteristics were studied through measurements and simulations. The effective Schottky barrier height (SBH) for electron, extracted from the thermionic emission model, drastically decreased from 0.68 to less than 0.1 eV while that for hole slightly increased from 0.43 to 0.53 eV. In order to identify the current conduction mechanisms, the experimental current-temperature-voltage characteristics for the n-type diode were fitted based on various models for transport of charge carrier in Schottky diodes. As the result, the large change in effective SBH for electron is ascribed to trap-assisted tunneling rather than barrier height inhomogeneity.

引用

页码：7339 / 7342

页数：4

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