Growth and characterization of BaBi2Nb2O9 thin films made by RF-magnetron sputtering

被引：1
|
作者：
Mazon, T [1 ]
Joanni, E
Fernandes, JRA
Zaghete, MA
Cilense, M
Varela, JA
机构：
[1] Univ Estadual Paulista, UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
[2] Univ Tras os Montes & Alto Douro, UTAD, Dept Fis, P-5001911 Vila Real, Portugal
[3] UNESC Porto, Unidade Optoelect & Sistemas Elect, P-4169007 Oporto, Portugal
来源：
FERROELECTRICS | 2003年 / 293卷
关键词：
BaBi2Nb2O9; thin films; dielectric properties; RF-magnetron sputtering;
D O I：
10.1080/00150190390238405
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The RF-magnetron sputtering technique has been used to deposit polycrystalline thin films of layered-structured ferroelectric BaBi2Nb2O9 (BBN). The XRD patterns for the films annealed at 700degreesC for 1 hour show the presence of the BBN phase as well as the BaNb2O6 secondary phase. A better crystallization of the BBN phase and an inhibition of the secondary phase is obtained with the increase of temperature. The surface of the prepared films was rather dense and smooth with no cracks. The 300 nm thick BBN thin films exhibited a room-temperature dielectric constant of about 779 with a dissipation factor of 0.09 at a frequency of 100 kHz.
引用
收藏
页码：201 / 207
页数：7
相关论文
共 50 条
  • [31] Synthesis and characterization of B2O3-doped zinc oxide thin films prepared via RF-magnetron sputtering
    Lu, Chung-Hsin
    Huang, Yu-Hsiang
    Dhobale, Ashok
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (1 A): : 228 - 230
  • [32] Preparation and characterization of BaBi2Nb2O9(BBN) ceramics synthetized by polymeric precursors method
    Campos, AL
    Mazon, T
    Varela, JA
    Zaghete, MA
    Cilense, M
    ADVANCED POWDER TECHNOLOGY II, 2001, 189-1 : 149 - 154
  • [33] Synthesis and characterization of B2O3-doped zinc oxide thin films prepared via RF-magnetron sputtering
    Lu, CH
    Huang, YH
    Dhobale, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (1A): : 228 - 230
  • [34] Preparation and characterization of BaBi2Nb2O9(BBN) ceramics synthetized by polymeric precursors method
    Campos, A.L.
    Mazon, T.
    Varela, J.A.
    Zaghete, M.A.
    Cilense, M.
    Key Engineering Materials, 2001, 189-191 : 149 - 154
  • [35] Influence of vanadium dopant on relaxor behavior of BaBi2Nb2O9 ceramics
    Adamczyk, M.
    Kozielski, L.
    Pilch, M.
    Pawelczyk, M.
    Soszynski, A.
    CERAMICS INTERNATIONAL, 2013, 39 (04) : 4589 - 4595
  • [36] Preparation and Characterization of Gd2O3 Thin Films by RF Magnetron Sputtering
    Pattabi, Manjunatha
    Thilipan, Arun Kumar G.
    SOLID STATE PHYSICS, VOL 57, 2013, 1512 : 726 - 727
  • [37] GROWTH AND DIELECTRIC CHARACTERIZATION OF YTTRIUM-OXIDE THIN-FILMS DEPOSITED ON SI BY RF-MAGNETRON SPUTTERING
    CRANTON, WM
    SPINK, DM
    STEVENS, R
    THOMAS, CB
    THIN SOLID FILMS, 1993, 226 (01) : 156 - 160
  • [38] Preparation of nanocrystalline ferroelectric BaBi2Nb2O9 by citrate gel method
    Gaikwad, SP
    Samuel, V
    Pasricha, R
    Ravi, V
    MATERIALS LETTERS, 2004, 58 (29) : 3729 - 3731
  • [39] Influence of sintering conditions on relaxor properties of BaBi2Nb2O9 ceramics
    Adamczyk, M.
    Ujma, Z.
    Pawelczyk, M.
    Szymczak, L.
    Kozielski, L.
    PHASE TRANSITIONS, 2006, 79 (6-7) : 435 - 445
  • [40] Preparation of SrBi2Ta2O9 ferroelectric thin films by RF magnetron sputtering
    Nishioka, Y
    Ishiwara, H
    INTEGRATED FERROELECTRICS, 2002, 46 : 265 - 274
12345