RbF/Ge(111) interface formation studied by LEED, XPS, and UPS

被引：1

作者：

Wiame, F ^{[1
]}

Yu, LM ^{[1
]}

Sporken, R ^{[1
]}

Thiry, PA ^{[1
]}

Caudano, R ^{[1
]}

Langlais, V ^{[1
]}

Belkhir, H ^{[1
]}

Debever, JM ^{[1
]}

机构：

[1] FAC SCI LUMINY,GRP PHYS ETAT CONDENSES,URA CNRS 783,F-13288 MARSEILLE 9,FRANCE

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.54.4480

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interface formation between rubidium fluoride (RbF) and the Ge(lll)c(2x8) surface has been studied by low-energy electron diffraction, x-ray photoelectron spectroscopy, and ultraviolet photoelectron spectroscopy as a function of growth temperature. Three interface types have been identified. Sublimation of RbF at 750 R leads to a (3x1) symmetry with three domains induced by a chemisorbed submonolayer of Rb. An epitaxial RbF overlayer is observed at 500 K with rubidium bound to the substrate (F-Rb-Ge). Island growth mode is observed at room temperature. A disordered layer of RbF is then formed, with two types of interfacial bonding: Rb-F-Ge and F-Rb-Ge. The stability of the RbF film under the irradiation of various beams is also discussed.

引用

页码：4480 / 4483

页数：4

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