Characteristics of silica-on-silicon platform with silicon oxide treatment for hybrid integrated optical module

被引：0
|
作者：
Kim, TH
Yoon, KH
机构：
[1] Inst Res, Informat Technol Res Lab, Taejon 305600, South Korea
[2] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 6A期
关键词：
silica platform; hybrid integrated optical module; silicon oxide formation; planar optical waveguide;
D O I：
10.1143/JJAP.42.3566
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
To investigate the effects of the silicon oxide process on the characteristics of the silica planar lightwave circuit (PLC) platform, we have compared two silicon oxide formation processes, thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). The thermal oxidation process for forming a silicon oxide layer on the silica platform generates surface defects and a crystobalite crystal phase, resulting in the deterioration of optical waveguide characteristics. However, the silica platform with a silicon oxide layer formed by PECVD has a transparent planar optical waveguide by suppressing the crystal growth of silica due to low processing temperatures. [DOI: 10.1143/JJAP.42.3566].
引用
收藏
页码：3566 / 3569
页数：4
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