Semiconductor Quantum Dot Lasers: A Tutorial

被引：46

作者：

Coleman, James J. ^{[1
]}

Young, Jonathan D. ^{[1
]}

Garg, Akash ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2011年 / 29卷 / 04期

基金：

美国国家科学基金会;

关键词：

Diode laser; inverse quantum dots; nanopores; nanostructures; quantum dots; self-assembly; semiconductor lasers; 3-D confinement; CHEMICAL-VAPOR-DEPOSITION; SELECTIVE-AREA EPITAXY; 1.3; MU-M; MOLECULAR-BEAM EPITAXY; DOUBLE HETEROSTRUCTURE LASERS; THRESHOLD CURRENT-DENSITY; FREQUENCY-MODULATION; INAS ISLANDS; TEMPERATURE-DEPENDENCE; INJECTION-LASER;

D O I：

10.1109/JLT.2010.2098849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor quantum dot lasers have been extensively studied for applications in future lightwave telecommunications systems. This paper summarizes a tutorial that was presented at the Optical Fiber Communication (OFC) 2010. The motivation for quantum dots in lasers is outlined, and the desirable effects of three dimensional quantum confinement are described. Methods for forming self-assembled quantum dots and the resultant laser characteristics are presented. The formation of patterned quantum dot lasers and the results of this type of quantum dot laser are outlined. Finally, a novel inverted quantum dot structure or nanopore laser containing 3-D quantization formed from an engineered periodicity is introduced.

引用

页码：499 / 510

页数：12

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