Mgnetoresistance in ballistic Ni nanocontact at 4.2K

被引：1
|
作者：
Ienaga, Koichiro [1 ]
Nakashima, Naoya [1 ]
Inagaki, Yuji [1 ]
Kawae, Tatsuya [1 ]
Tsujii, Hiroyuki [2 ]
机构：
[1] Kyushu Univ, Dept Appl Quantum Phys, Fukuoka 8190395, Japan
[2] Kanazawa Univ, Dept Educ, Kanazawa, Ishikawa 9201192, Japan
来源：
TENCON 2010: 2010 IEEE REGION 10 CONFERENCE | 2010年
关键词：
Atomic-sized contact; magnetoresistance; Magnetostriction; Ni; MAGNETORESISTANCE; CONDUCTANCE;
D O I：
10.1109/TENCON.2010.5686404
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The magnetoresistance (MR) effect is studied in Ni atomic-sized contact at 4.2K. We show that the magnetostriction gives rise to a huge MR ratio by switching the direction of the magnetization axis.
引用
收藏
页码：1891 / 1893
页数：3
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