JUNCTION FIELD EFFECT TRANSISTORS AT 4.2K

被引：12
|
作者：
WAGNER, RR
ANDERSON, PT
BERTMAN, B
机构：
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 1970年 / 41卷 / 07期
关键词：
D O I：
10.1063/1.1684726
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：917 / &
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