Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

被引：16

作者：

Hou, Y. ^{[1
,2
,3
]}

Celano, U. ^{[2
,3
]}

Goux, L. ^{[2
]}

Liu, L. ^{[1
]}

Degraeve, R. ^{[2
]}

Cheng, Y. ^{[1
]}

Kang, J. ^{[1
]}

Jurczak, M. ^{[2
]}

Vandervorst, W. ^{[2
,3
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Heverlee, Belgium

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 02期

关键词：

FILAMENT;

D O I：

10.1063/1.4954258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices. Published by AIP Publishing.

引用

页数：5

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