Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy

被引：4

作者：

Kim Ngoc Pham ^{[1
]}

Choi, Minsu ^{[2
]}

Cao Vinh Tran ^{[3
]}

Trung Do Nguyen ^{[1
]}

Van Hieu Le ^{[1
]}

Choi, Taekjib ^{[4
]}

Lee, Jaichan ^{[2
]}

Bach Thang Phan ^{[1
,3
]}

机构：

[1] Vietnam Natl Univ, Univ Sci, Fac Mat Sci, Ho Chi Minh City, Vietnam

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon, South Korea

[3] Vietnam Natl Univ, Univ Sci, Adv Mat Lab, Ho Chi Minh City, Vietnam

[4] Sejong Univ, Inst Nanotechnol & Adv Mat Engn, Hybrid Mat Res Ctr & Fac, Seoul, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Chromium oxide; resistive switching; electrochemical redox reactions; C-AFM; Ag filament; ELECTRICAL-CONDUCTION; MEMORY;

D O I：

10.1007/s11664-015-3889-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reversible resistive switching of Cr2O3 films was studied by use of conductive atomic force microscopy. Resistive switching in Cr2O3 films occurs as a result of Ag filament paths formed during electrochemical redox reactions. A large memory density of 100 Tbit/sq. inch was achieved with a small filament diameter of 2.9 nm under the action of a compliance current of 10 nA. A fast switching speed of 10 ns, high scalability, and low set/reset currents suggest that Cr2O3-based resistive memory is suitable for nanoscale devices.

引用

页码：3395 / 3400

页数：6

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