Study of the Turn-on of Various High-Voltage SiC Thyristors

被引:0
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作者
O'Brien, Heather [1 ]
Ogunniyi, Aderinto [1 ]
Shaheen, William [2 ]
Ryu, Sei-Hyung [3 ]
机构
[1] US Army Res Lab, RDRL SED P, Adelphi, MD 20783 USA
[2] Berkeley Res Associates Inc, Beltsville, MD USA
[3] Wolf Speed, Durham, NC USA
关键词
silicon carbide; thyristor; high voltage; CM(2);
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This research is focused on characterization of the turn-on transition of high voltage SiC thyristors of different epilayer thicknesses and active area sizes to determine their suitability and limitations in high-dVdt, fast-switching applications. The unique aspects of this study include the very high current density being switched through the thyristors over a short period of time at initial turn-on, resulting in very high instantaneous dissipated power over the small device volume. The devices that were characterized were 6 kV, 0.5 cm(2) super gate turn-off thyristors (SGTOs), 10 kV, 1.05 cm(2) SGTOs, and 15 kV, 1.05 cm(2) SGTOs, all fabricated by Cree, Inc. for the Army Research Laboratory. The highest dI/dt and current density were 13 kA/microsecond and 3.2 kA/cm(2) for a parallel pair of 0.5 cm(2) thyristors, with pulse current peaking 250 ns from initial gate trigger. These evaluations help determine tradeoffs between series-stacking two lower-voltage thyristors versus using a single thicker-epi device, or paralleling two small-area devices versus switching one larger device, for fast-switching applications.
引用
收藏
页码:5 / 9
页数:5
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