Fabrication and characterisation of high-voltage SiC-thyristors

被引：0
|
作者：
Zorngiebel, V
Scharnholz, S
Spahn, E
Brosselard, P
Arssi, N
Chante, JP
Planson, D
Raynaud, C
Spangenberg, B
Kurz, H
机构：
[1] French German Res Inst St Louis, FR-68301 St Louis, France
[2] INSA, GEGELY, FR-69621 Villeurbanne, France
[3] Univ Aachen, Inst Semicond, DE-52074 Aachen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷
关键词：
EGR; GTO; high power devices; JTE; MESA; SiC; thyristors;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on numerical simulations we fabricated thyristors on SiC with respect to different pulsed power applications. In order to achieve high breakover voltages we developed and investigated various types of terminations (MESA, EGR, JTE). Thyristors, terminated by epitaxial guard rings (EGR), showed breakover voltage of up to about 1900 V. By dynamic electrical characterisations of the devices a reliable turn-on and turn-off could be demonstrated.
引用
收藏
页码：883 / 886
页数：4
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