Nanoscale resistance switching in manganite thin films: Sharp voltage threshold and pulse-width dependence

被引：13
|
作者：
Krisponeit, Jon-Olaf [1 ]
Kalkert, Christin [1 ]
Damaschke, Bernd [1 ]
Moshnyaga, Vasily [1 ]
Samwer, Konrad [1 ]
机构：
[1] Univ Gottingen, Inst Phys 1, D-37077 Gottingen, Germany
来源：
PHYSICAL REVIEW B | 2010年 / 82卷 / 14期
关键词：
MAGNETORESISTANCE; TRANSITIONS; CHARGE;
D O I：
10.1103/PhysRevB.82.144440
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the local-conductivity properties of a La0.8Ca0.2MnO3 thin film, studied by conductive atomic force microscopy. Nonvolatile and bipolar reversible switching of nanometer-sized regions was observed. A threshold voltage, U-c approximate to 3 V, and a logarithmic pulse-width dependence compatible with domain-wall creep were revealed. The results are difficult to explain in terms of an ionic drift scenario but rather indicate a switching mechanism based on orbital and accompanying structural changes. A phenomenological model of an electric field-induced structural transition is proposed.
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收藏
页数：6
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