Design of Transient Enhanced LDO Circuit for GaN HEMT Gate Driver

被引：0

作者：

Wang, Li ^{[1
]}

Zhou, Dejin ^{[2
,3
]}

He, Ningye ^{[1
]}

Xu, Yuan ^{[1
]}

He, Xiaoxiong ^{[4
]}

Chen, Zhenhai ^{[5
,6
]}

机构：

[1] Huangshan Univ, Engn Technol Res Ctr Intelligent Microsyst AnHui, Huangshan, Peoples R China

[2] Fudan Univ, Sch Microelect, Shanghai, Peoples R China

[3] Tsinghua Univ, Wuxi Res Inst Appl Technol, Shanghai, Peoples R China

[4] HeFei Univ Technol, Sch Elect Engn & Automat, Hefei, Peoples R China

[5] Tsinghua Univ, Engn Technol Res Ctr Intelligent Microsyst AnHui, Wuxi Res Inst Appl Technol, Shanghai, Peoples R China

[6] HeFei Univ Technol, Sch Elect Engn & Automat, Huangshan, Peoples R China

来源：

2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021) | 2021年

关键词：

dynamic bias; high-speed comparator; LDO; transient response;

D O I：

10.1109/ICICM54364.2021.9660317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dynamic bias transient enhanced LDO (Low Dropout regulator) circuit for GaN gate driver is presented in this paper. With high-speed comparator, the bias current of LDO error amplifier can be switched dynamically when large load occurs. The reference voltage of high-speed comparator determines the response time of dynamic bias control circuit. The LDO has been designed in 0.18 mu m BCD (Bipolar-CMOS-DMOS) process, simulation results show that the proposed LDO undershoot voltage is 16.6% of output voltage and the recovery time is less than 0.5us when load current is changed from 0mA to 20mA by frequency is 1MHZ.

引用

页码：40 / 44

页数：5

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