A resonant gate driver circuit for GaN device

被引：0
|
作者：
Zhao Q. [1 ]
Chen L. [1 ]
Yuan J. [1 ]
Wang Y. [1 ]
机构：
[1] Key Laboratory of Power Electronics for Energy Conservation and Motor Drive of Hebei Province, College of Electrical Engineering, Yanshan University, Qinhuangdao
来源：
Dianli Zidonghua Shebei/Electric Power Automation Equipment | 2019年 / 39卷 / 04期
关键词：
GaN device; Gate driver; High frequency converter; Resonant gate driver;
D O I：
10.16081/j.issn.1006-6047.2019.04.017
中图分类号：
学科分类号：
摘要：
GaN devices are traditionally driven by the voltage source circuit, and could be easily damaged when the gate-source voltage of GaN device oscillates and exceeds the maximum withstanding voltage owing to the parasitic inductance in charge and discharge circuit under high-frequency operation. RGD(Resonant Gate Driver) circuit represents an effective approach to solve the problem of oscillation of the gate-source voltage. A low impedance clamped path can be obtained using LC resonance when GaN devices are turned on and off, which can reduce the oscillation of gate voltage and provide a stable gate voltage. The working principle of RGD circuit is described in detail. Meanwhile, a prototype of 1 MHz Boost converter is designed and the experimental results are provided. © 2019, Electric Power Automation Equipment Press. All right reserved.
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页码：114 / 118
页数：4
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