Phase change materials

被引：73

作者：

Raoux, Simone ^{[1
]}

Ielmini, Daniele ^{[2
,3
]}

Wuttig, Matthias ^{[4
,6
,7
]}

Karpov, Ilya ^{[5
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[3] Politecn Milan, IUNFT, I-20133 Milan, Italy

[4] Rhein Westfal TH Aachen, Phys Inst IA 1, D-52056 Aachen, Germany

[5] Intel Corp, Santa Clara, CA 95054 USA

[6] Rhein Westfal TH Aachen, Inst Phys IA, D-52056 Aachen, Germany

[7] Rhein Westfal TH Aachen, Dept Phys, D-52056 Aachen, Germany

来源：

MRS BULLETIN | 2012年 / 37卷 / 02期

关键词：

amorphous; crystal; Memory; phase transformation;

D O I：

10.1557/mrs.2011.357

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phase change materials can be switched rapidly and repeatedly between amorphous and crystalline phases, which differ distinctly in their optical and electrical properties. This combination of properties is utilized to store information in rewritable optical storage media and in emerging phase change memory technology. This article describes the physical properties of phase change materials such as Ge2Sb2Te5 and relates these properties to specific structural and bonding characteristics. Electrical conduction and switching, which are relevant for phase change memory operation, are explained from a physical perspective. Phase change memory device integration and technology development are discussed, including aspects of access device selection and integration.

引用

页码：118 / 123

页数：6

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