Theoretical tools for the description of charge transport in disordered organic semiconductors

被引：67
|
作者：
Nenashev, A. V. [1 ,2 ]
Oelerich, J. O. [3 ,4 ]
Baranovskii, S. D. [3 ,4 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
[3] Univ Marburg, Fac Phys, D-35032 Marburg, Germany
[4] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2015年 / 27卷 / 09期
关键词：
charge transport; disorder; organic semiconductors; FIELD-EFFECT TRANSISTORS; DENSITY-OF-STATES; MOLECULARLY DOPED POLYMERS; BAYM-KELDYSH APPROACH; HOPPING TRANSPORT; ELECTRONIC TRANSPORT; CONJUGATED POLYMERS; CARRIER TRANSPORT; MAGNETIC-FIELD; HOLE TRANSPORT;
D O I：
10.1088/0953-8984/27/9/093201
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Hopping conduction is widely considered the dominant charge transport mechanism in disordered organic semiconductors. Although theories of hopping transport have been developed in detail for applications to inorganic amorphous materials, these theories are often out of scope for the community working with organic amorphous systems. Theoretical research on charge transport in organic systems is overwhelmed by phenomenological fittings of numerical results by equations, which often make little physical sense. The aim of the current review is to bring analytical theoretical methods to the attention of the community working with disordered organic semiconductors.
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页数：26
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