MOCVD of Vanadium Oxide Films with a Novel Vanadium(III) Precursor

被引：16
|
作者：
Crociani, Laura [1 ]
Carta, Giovanni [1 ]
Natali, Marco [1 ]
Rigato, Valentino [2 ]
Rossetto, Gilberto [1 ]
机构：
[1] CNR, Inst Chim Inorgan & Superfici, I-35127 Padua, Italy
[2] Ist Nazl Fis Nucl, LNL, I-35020 Legnaro, Italy
来源：
CHEMICAL VAPOR DEPOSITION | 2011年 / 17卷 / 1-3期
关键词：
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; VO2; ALKOXIDES; COATINGS; GLASS; CVD;
D O I：
10.1002/cvde.201004291
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this communication we report the synthesis and characterization of the vanadium (III) alkoxide [V(OCMe2CH2OMe)(3)], which presents an appreciable volatility (55 degrees C/1.5 Torr), its successful use as MOCVD precursor for the deposition of pure VO2 and V2O5 films and the characterization of the films by means of Rutherford Backscattering Spectroscopy (RBS), X-Ray Diffraction (XRD) and Cyclic Voltammetry.
引用
收藏
页码：6 / 8
页数：3
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