Resist removal by using wet ozone

被引：24

作者：

Horibe, Hideo ^{[1
]}

Yamamoto, Masashi

Ichikawa, Tomokazu

Kamimura, Tomosumi

Tagawa, Seiichi

机构：

[1] Kanazawa Inst Technol, Res Lab Integrated Technol Syst, Haku San, Ishikawa, Japan

[2] Kochi Natl Coll Technol, Dept Mat Sci & Engn, Kochi 7838508, Japan

[3] Osaka Inst Technol, Informat & Commun Engn, Dept Elec, Osaka 5658585, Japan

[4] Osaka Univ, Inst Sci & Ind Res, Ibaraki 5670047, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2007年 / 20卷 / 02期

关键词：

resist; removal; wet ozone; chemicals; resist implanted ions; environment;

D O I：

10.2494/photopolymer.20.315

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

We have investigated the resist removal by using wet ozone. Removal rate of the resist was optimum when both of the wet ozone and substrate temperature was at around 60°C. In that condition, the resist removal was better as decreasing the ozone irradiation interval time. Furthermore, in the better conditions the removal rate of resist was accomplished up to 3.4 μm/min by means of being 1.30mm of gap length between the substrate and the ozone irradiation nozzle. In spite of the implanted ion species, the resist with ions of 5×1012 atoms/cm2 could be removed. It was found that the resist removal rate by using wet ozone was corresponded to the removing with chemicals. ©2007TAPJ.

引用

页码：315 / 318

页数：4

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