Electrical Transport Properties and Spin Injection in Co2FeAl0.5Si0.5/GaAs Junctions

被引：8
|
作者：
Saito, Tatsuya [1 ]
Tezuka, Nobuki [1 ]
Sugimoto, Satoshi [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2011年 / 47卷 / 10期
基金：
日本科学技术振兴机构;
关键词：
Co2FeAl0.5Si0.5; full-Heusler alloy; spin injection; spintronics; RELAXATION; SILICON;
D O I：
10.1109/TMAG.2011.2153189
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the electrical transport properties in Co2FeAl0.5Si0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2 x 10(-9) Omega . m(2) which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L2(1) ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.
引用
收藏
页码：2447 / 2450
页数：4
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