Ultra-thin SOI replacement gate CMOS with ALD TaN/high-k gate stack

被引：0

作者：

Doris, B ^{[1
]}

Linder, B ^{[1
]}

Narayanan, V ^{[1
]}

Callegari, S ^{[1
]}

Gousev, E ^{[1
]}

Park, DG ^{[1
]}

Settlemyer, K ^{[1
]}

Jamison, P ^{[1
]}

Boyd, D ^{[1
]}

Li, Y ^{[1
]}

Hagan, J ^{[1
]}

Staendert, T ^{[1
]}

Mezzapelli, J ^{[1
]}

Dobuzinsky, D ^{[1
]}

Guarini, K ^{[1
]}

Jammy, R ^{[1
]}

Ieong, M ^{[1
]}

机构：

[1] IBM Corp, SRDC, Mircoelect Div, Fishkill, NY 12533 USA

来源：

2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：101 / 102

页数：2

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