Measurement of the mechanical stability of semiconductor line structures in drying liquids with application to pattern collapse

被引:2
|
作者
Peter, Daniel [1 ]
Dalmer, Michael [1 ]
Lechner, Alfred [2 ]
Gigler, Alexander M. [3 ]
Stark, Robert W. [4 ]
Bensch, Wolfgang [5 ]
机构
[1] Lam Res AG, A-9500 Villach, Austria
[2] Univ Appl Sci Regensburg, Dept Microsyst Engn, D-93049 Regensburg, Germany
[3] Univ Munich, Dept Earth & Environm Sci, Ctr NanoSci CeNS, D-80333 Munich, Germany
[4] Tech Univ Darmstadt, Ctr Smart Interfaces, Darmstadt, Germany
[5] Univ Kiel, Dept Inorgan Chem, D-24098 Kiel, Germany
关键词
ATOMIC-FORCE MICROSCOPE; SINGLE-CRYSTAL SILICON; STRESS-CORROSION CRACKING; LATERAL FORCE; CALIBRATION METHOD; FRACTURE;
D O I
10.1088/0960-1317/21/2/025001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Enhanced particle removal processes in wet cleaning as well as drying processes of semiconductor wafers can cause significant lateral forces on surface structures. These forces, however, must not exceed the mechanical stability of structures on the wafer. Thus, a mechanical fracture test was used to assess the lateral mechanical stability of polysilicon line structures in relevant process liquids. The mechanical test was based on nanomanipulation with an atomic force microscope. Compared to fracture tests in air, data acquired in liquid isopropanol revealed a stabilizing effect. The differences in fracture forces can be attributed to a stress corrosion process on the surface. The size of the generated damage was influenced by the viscosity of the surrounding media.
引用
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页数:6
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