ScCO2 Drying for Preventing Pattern Collapse in Advanced Logic Device Structures

被引：0

作者：

Sankarapandian, M. ^{[1
]}

Lo, Wei-Shang ^{[1
]}

Ramirez, Alma Vela ^{[1
]}

Flores, Nash ^{[1
]}

Liu, Xuan ^{[1
]}

Yamanaka, Reijiro ^{[2
]}

Inoue, Saya ^{[2
]}

Shimomura, Shinichiro ^{[2
]}

Iwanaga, Koji ^{[2
]}

机构：

[1] IBM Res, Albany, NY 12203 USA

[2] Tokyo Elect Ltd, Tokyo, Japan

来源：

2024 35TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, ASMC | 2024年

关键词：

Nanosheet; pattern collapse; drying; RIE cleaning; ScCO2;

D O I：

10.1109/ASMC61125.2024.10545479

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Supercritical CO2 (ScCO2) drying has been demonstrated to prevent pattern collapse causing Line Flop-over (LF) during post gate reactive ion etching (RIE) cleaning of advanced Nanosheet devices. Drying with conventional low surface tension liquids like IPA did not help in preventing the LF's in these high aspect ratio structures (AR = 13-17).

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页数：4

共 15 条

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