Room-temperature ferromagnetism in cu doped GaN nanomores

被引:95
|
作者
Seong, Han-Kyu
Kim, Jae-Young
Kim, Ju-Jin
Lee, Seung-Cheol
Kim, So-Ra
Kim, Ungkil
Park, Tae-Eon
Choi, Heon-Jin [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Pohang Univ Sci & Technol, Dept Phys, Pohang Accelerator Lab, Pohang 790784, South Korea
[3] Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea
[4] Korea Adv Inst Sci & Technol, Future Technol Res Div, Seoul 136791, South Korea
关键词
D O I
10.1021/nl0716552
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 mu(B)/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L-2,L-3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d(9) but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu Old orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.
引用
收藏
页码:3366 / 3371
页数:6
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