A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu

被引：285
|
作者：
Han, SJ
Song, JW
Yang, CH
Park, SH
Park, JH
Jeong, YH [1 ]
Rhie, KW
机构：
[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Elect Spin Sci Ctr, Pohang 790784, South Korea
[3] Korea Univ, Dept Phys, Chochiwon 339700, South Korea
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 22期
关键词：
D O I：
10.1063/1.1525885
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Successful synthesis of room-temperature ferromagnetic semiconductors, Zn1-xFexO, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn1-xFexO was found to be additional Cu doping. A transition temperature as high as 550 K was obtained in Zn0.94Fe0.05Cu0.01O; the saturation magnetization at room temperature reached a value of 0.75mu(B) per Fe. A large magnetoresistance was also observed below 100 K. (C) 2002 American Institute of Physics.
引用
收藏
页码：4212 / 4214
页数：3
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