Accuracy in CD-SEM metrology

被引:5
|
作者
Nikitin, AV
Sicignano, A
Yeremin, DY
Sandy, M
Goldburt, T
机构
关键词
accuracy; precision; CD-SEM metrology; threshold; linear approximation; edge localization;
D O I
10.1117/12.485017
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Accuracy in CD-SEM metrology is divided into two discrete categories. The first category is the certification of the measuring tools' (CD-SEMs) magnification behavior. This involves magnification stability, magnification linearity and magnification calibration to a certified reference The second category is the interpretation of physical feature dimensions from their representation in the CD-SEM's digital image. To date, the algorithms used to interpret physical dimensions from CD-SEM images trace their history to image analysis algorithms developed decades ago. This paper evaluates the currently used feature analysis algorithm available in commercial CD-SEMs and compares their behavior to a newer approach developed by Nanometrology. Measurement algorithms must be stable and not contain arbitrary free parameters. In addition, the basis for the construct of the algorithm should be founded on an understanding of e-beam sample interactions and the resulting video signal profiles resulting from this interaction.
引用
收藏
页码:651 / 662
页数:12
相关论文
共 50 条
  • [1] A glimpse of metrology beyond CD-SEM
    不详
    [J]. SOLID STATE TECHNOLOGY, 2001, 44 (04) : 32 - +
  • [2] Factors influencing CD-SEM metrology
    Sicignano, A
    Nikitin, AV
    Yeremin, DY
    Sandy, M
    Goldburt, ET
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVI, PTS 1 & 2, 2002, 4689 : 1179 - 1189
  • [3] Using CD-SEM metrology in the manufacture of semiconductors
    John McIntosh
    [J]. JOM, 1999, 51 : 38 - 39
  • [4] Small feature accuracy challenge for CD-SEM metrology physical model solution
    Bunday, Benjamin
    Allgair, John
    Adan, Ofer
    Tam, Aviram
    Latinski, Sergey
    Eytan, Guy
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XX, PTS 1 AND 2, 2006, 6152
  • [5] Using CD-SEM metrology in the manufacture of semiconductors
    McIntosh, J
    [J]. JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1999, 51 (03): : 38 - 39
  • [6] A study of CD-SEM suitability for CD metrology of modern photomasks
    Ng, WM
    Anderson, G
    Villa, H
    Kalk, F
    [J]. PHOTOMASK AND X-RAY MASK TECHNOLOGY VI, 1999, 3748 : 585 - 591
  • [7] Characterization of CD-SEM metrology for iArF photoresist materials
    Bunday, Benjamin
    Cordes, Aaron
    Orji, N. G.
    Piscani, Emil
    Cochran, Dan
    Byers, Jeff
    Allgair, John
    Rice, Bryan J.
    Avitan, Yohanan
    Peltinov, Ram
    Bar-Zvi, Maayan
    Adan, Ofer
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXII, PTS 1 AND 2, 2008, 6922 (1-2):
  • [8] Inline CD metrology with combined use of scatterometry and CD-SEM
    Asano, Masafumi
    Ikeda, Takahiro
    Koike, Tom
    Abe, Hideaki
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XX, PTS 1 AND 2, 2006, 6152
  • [9] Automated CD-SEM metrology for efficient TD and HVM
    Starikov, Alexander
    Mulapudi, Satya P.
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXII, PTS 1 AND 2, 2008, 6922 (1-2):
  • [10] In-die Overlay Metrology by using CD-SEM
    Inoue, Osamu
    Kato, Takeshi
    Okagawa, Yutaka
    Kawada, Hiroki
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVII, 2013, 8681