Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states

被引：10
|
作者：
Firsov, D. A. [1 ]
Shalygin, V. A. [1 ]
Panevin, V. Yu. [1 ]
Melentyev, G. A. [1 ]
Sofronov, A. N. [1 ]
Vorobjev, L. E. [1 ]
Andrianov, A. V. [2 ]
Zakhar'in, A. O. [2 ]
Mikhrin, V. S. [2 ]
Vasil'ev, A. P. [2 ]
Zhukov, A. E. [3 ]
Gavrilenko, L. V. [4 ]
Gavrilenko, V. I. [4 ]
Antonov, A. V. [4 ]
Aleshkin, V. Ya. [4 ]
机构：
[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] St Petersburg Acad Univ, Res & Educ Ctr Nanotechnol, Russian Acad Sci, St Petersburg 195220, Russia
[4] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 11期
关键词：
Resonant State; Impurity State; Terahertz Radiation; Longitudinal Electric Field; Photocurrent Spectrum;
D O I：
10.1134/S1063782610110023
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown that the spectra contain features associated with electron transitions involving resonant impurity states related to the second quantum-well subband. Calculations of the energy spectrum of impurity states and matrix elements of optical transitions made by taking into account various positions of the impurity relative to the QW center confirm the assumptions made.
引用
收藏
页码：1394 / 1397
页数：4
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