Intraband emission and absorption of terahertz radiation in GaAs/AlGaAs quantum wells

被引：0

作者：

Ganichev, S. D. ^{[1
]}

Danilov, S. N. ^{[1
]}

Gerl, Ch. ^{[1
]}

Firsov, D. A. ^{[2
]}

Vorobjev, L. E. ^{[2
]}

Shalygin, V. A. ^{[2
]}

Panevin, V. Yu. ^{[2
]}

Sofronov, A. N. ^{[2
]}

Andrianov, A. A. ^{[3
]}

Zakhar'in, A. O. ^{[3
]}

Zhukov, A. E. ^{[3
]}

Mikhrin, V. S. ^{[3
]}

Vasil'ev, A. P. ^{[3
]}

机构：

[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany

[2] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

[3] Ioffe Physco Tech Inst, St Petersburg 194021, Russia

来源：

2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 | 2007年

关键词：

intraband light absorption; lateral electric field; quantum wells; resonant impurity states; spontaneous emission;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spontaneous emission of terahertz radiation, equilibrium intraband terahertz; light absorption and its temperature dependence are studied in GaAs/AlGaAs quantum well (QW) structures subjected to a lateral electric field. The emission spectrum consists of several lines we attribute to electron transitions between resonant and localized impurity states and to the electron transitions with participation of subband states.

引用

页码：609 / +

页数：2

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