Spectrum analysis of CdS thin films deposited by chemical bath deposition with ultrasonication

Ultrasonic agitation was applied during the chemical bath deposition of CdS thin films and a great difference in the growth of CdS thin films was found to be caused by ultrasonication. The thickness of the thin films was measured by Rutherford back-scattering (RBS) and the crystalloid structure was analyzed by X-ray diffraction (XRD). SEM was used to observe the surface morphology of the thin films. The results showed that ultrasonication can effectively improve the quality of the CdS thin films and the films preparated by this method were uniform, compact and well constructed. There were virtually no colloidal particles adsorbed on the surface. X-ray diffraction showed that the preferred orientation changed from hexagonal(002) /cubic( 111) to hexagonal(101). At the same time controlling the time of deposition could control the thickness of the films accurately to about 50 nm, which can meet the special need in preparation of thin film solar cells.