PHOTOLUMINESCENCE AND RAMAN STUDIES OF CDS FILMS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION ON SI(111) SUBSTRATES

CdS epitaxial films grown using metal-organic chemical vapor deposition on Si{111} substrates at growth temperatures ranging from 270 to 325-degrees-C have been characterized using photoluminescence and Raman spectroscopy. Out of all the samples the best optical behavior is obtained from that grown at the lowest temperature. Samples grown at the lowest temperature exhibited increased intensity of the bound excitonic peaks and reduced emission at the defect-related luminescence region. The Raman spectra were compatible with the film surface being normal to the c axis, indicating a preferred growth orientation.