7.2-kV/60-A Austin SuperMOS: An Intelligent Medium-Voltage SiC Power Switch

被引:38
|
作者
Zhang, Liqi [1 ]
Sen, Soumik [1 ]
Huang, Alex Q. [1 ]
机构
[1] Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
关键词
Deadtime; intelligent power module integration; medium voltage; overcurrent protection; SiC MOSFET; MOSFETS MODULE; COMPACT;
D O I
10.1109/JESTPE.2019.2951602
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to enable medium-voltage applications at an operation voltage of 5-kV level, a novel 7.2-kV/60-A Austin SuperMOS SiC power switch is developed. Static and dynamic performances are characterized at various voltage and current levels. The device exhibits excellent dynamic performance with a high dV/dt up to 122 V/ns during the turn-off. The output charge of the Austin SuperMOS is also measured to enable accurate dynamic loss estimation. A unique automatic gate turn-on mechanism is identified, which facilitates a substantial reduction of the third quadrant conduction loss during the deadtime in converter operations. A high-voltage isolated power supply with low coupling capacitance and an optically triggered intelligent gate driver circuit with protection functions are integrated into the medium-voltage power switch, enabling safe and reliable medium-voltage operations of the Austin SuperMOS.
引用
收藏
页码:6 / 15
页数:10
相关论文
共 50 条
  • [21] Design and Optimization of High Performance Gate Driver for Medium-Voltage SiC Power Modules
    Li, Lei
    Gan, Yongmei
    Yuan, Tianshu
    Ma, Dingkun
    Nie, Yan
    Sun, Peiyuan
    Dong, Xiaobo
    Gao, Kai
    Wang, Laili
    2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2024, : 2800 - 2805
  • [22] Modular Scalable Medium-voltage Impedance Measurement Unit Using 10 kV SiC MOSFET PEBBs
    Cvetkovic, Igor
    Shen, Zhiyu
    Jaksic, Marko
    DiMarino, Christina
    Chen, Fang
    Boroyevich, Dushan
    Burgos, Rolando
    2015 IEEE ELECTRIC SHIP TECHNOLOGIES SYMPOSIUM (ESTS), 2015, : 326 - 331
  • [23] High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module
    Jorgensen, Asger Bjorn
    Aunsborg, Thore Stig
    Beczkowski, Szymon
    Uhrenfeldt, Christian
    Munk-Nielsen, Stig
    IET POWER ELECTRONICS, 2020, 13 (03) : 475 - 482
  • [24] A Medium-Voltage Medium-Frequency Isolated DC-DC Converter Based on 15-kV SiC MOSFETs
    Wang, Li
    Zhu, Qianlai
    Yu, Wensong
    Huang, Alex Q.
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2017, 5 (01) : 100 - 109
  • [25] Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack
    Dalal, Dipen Narendra
    Zhao, Hongbo
    Jorgensen, Jannick Kjaer
    Christensen, Nicklas
    Jorgensen, Asger Bjorn
    Beczkowski, Szymon
    Uhrenfeldt, Christian
    Munk-Nielsen, Stig
    2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020), 2020, : 2751 - 2757
  • [26] Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter
    Mocevic, Slavko
    Yu, Jianghui
    Fan, Boran
    Sun, Keyao
    Xu, Yue
    Stewart, Joshua
    Rong, Yu
    Song, He
    Mitrovic, Vladimir
    Yan, Ning
    Wang, Jun
    Cvetkovic, Igor
    Burgos, Rolando
    Boroyevich, Dushan
    DiMarino, Christina
    Dong, Dong
    Motwani, Jayesh Kumar
    Zhang, Richard
    iEnergy, 2022, 1 (01): : 100 - 113
  • [27] Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions
    Vechalapu, Kasunaidu
    Bhattacharya, Subhashish
    Van Brunt, Edward
    Ryu, Sei-Hyung
    Grider, Dave
    Palmour, John W.
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2017, 5 (01) : 469 - 489
  • [28] Advancement of SiC High-frequency Power Conversion Systems for Medium-Voltage High-Power Applications
    Dong, Dong
    Lin, Xiang
    Ravi, Lakshmi
    Yan, Ning
    Burgos, Rolando
    2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA), 2020, : 717 - 724
  • [29] Gate Driver Power Supply With Low-Capacitance-Coupling and Constant Output Voltage for Medium-Voltage SiC MOSFETs
    Yan, Zhixing
    Liu, Gao
    Luan, Shaokang
    Gao, Yuan
    Wang, Rui
    Kjaersgaard, Benjamin Futtrup
    Nielsen, Morten Rahr
    Rannestad, Bjorn
    Zhao, Hongbo
    Munk-Nielsen, Stig
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (06) : 8194 - 8205
  • [30] 4.5kV-400A Modules using SiC-PiN diodes and Si-IEGTs Hybrid Pair for High Power Medium-Voltage Power Converters
    Takao, Kazuto
    Wada, Keiji
    Sung, Kyungmin
    Mastuoka, Yuji
    Tanaka, Yasunori
    Nishizawa, Shinichi
    Ota, Chiharu
    Kanai, Takeo
    Shinohe, Takashi
    Ohashi, Hiromichi
    2012 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2012, : 1509 - 1514