7.2-kV/60-A Austin SuperMOS: An Intelligent Medium-Voltage SiC Power Switch

被引:38
|
作者
Zhang, Liqi [1 ]
Sen, Soumik [1 ]
Huang, Alex Q. [1 ]
机构
[1] Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
关键词
Deadtime; intelligent power module integration; medium voltage; overcurrent protection; SiC MOSFET; MOSFETS MODULE; COMPACT;
D O I
10.1109/JESTPE.2019.2951602
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to enable medium-voltage applications at an operation voltage of 5-kV level, a novel 7.2-kV/60-A Austin SuperMOS SiC power switch is developed. Static and dynamic performances are characterized at various voltage and current levels. The device exhibits excellent dynamic performance with a high dV/dt up to 122 V/ns during the turn-off. The output charge of the Austin SuperMOS is also measured to enable accurate dynamic loss estimation. A unique automatic gate turn-on mechanism is identified, which facilitates a substantial reduction of the third quadrant conduction loss during the deadtime in converter operations. A high-voltage isolated power supply with low coupling capacitance and an optically triggered intelligent gate driver circuit with protection functions are integrated into the medium-voltage power switch, enabling safe and reliable medium-voltage operations of the Austin SuperMOS.
引用
收藏
页码:6 / 15
页数:10
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