High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers

被引：1
|
作者：
Koda, Rintaro [1 ,2 ]
Oki, Tomoyuki [2 ]
Miyajima, Takao [1 ,2 ]
Watanabe, Hideki [2 ]
Kono, Shunsuke [1 ]
Kuramoto, Masaru [1 ,2 ]
Ikeda, Masao [1 ,2 ]
Yokoyama, Hiroyuki [1 ]
机构：
[1] Tohoku Univ, New Ind Creat Hatchery Ctr NICHe, Sendai, Miyagi 9808579, Japan
[2] SONY Corp, Adv Mat Labs, Atsugi, Kanagawa 2430014, Japan
来源：
NOVEL IN-PLANE SEMICONDUCTOR LASERS X | 2011年 / 7953卷
关键词：
mode-locked laser diode; high peak power optical pulse; GaN; GaInN; optical amplification; semiconductor optical amplifier; optical data storage; two-photon absorption; STORAGE;
D O I：
10.1117/12.877030
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We present optical pulse generation with 100 W peak power, 3 ps temporal duration, and 1 GHz repetition from a GaInN master oscillator power amplifier (MOPA). An external cavity GaInN laser diode is passively mode-locked to generate 4 W peak power optical pulses as a master oscillator, and a semiconductor optical amplifier (SOA) effectively amplified these to a high peak power of more than 100 W. Two major factors that contributed to effective amplification of optical pulses were the generation of clean optical pulses without sub-pulse components by the GaInN mode-locked laser diode and suppression of amplified spontaneous emission in the SOA. This novel high-peak-power pulse source is used to induce multi-photon absorption to create sub-micrometer recording marks in a bulk plastic recording media. The realization of an all-semiconductor pulse source is a significant breakthrough towards a practical 3D optical data storage system.
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页数：7
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