Molecular dissociation of group-V hydrides on Si(001)

被引：17

作者：

McDonell, TL ^{[1
]}

Marks, NA

Warschkow, O

Wilson, HF

Smith, PV

Radny, MW

机构：

[1] Univ Sydney, Sch Phys, Ctr Quatum Comp Technol, Sydney, NSW 2006, Australia

[2] Univ Newcastle, Sch Math & Phys Sci, Callaghan, NSW 2308, Australia

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.72.193307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a comparative ab initio survey of possible dissociation products of NH3, PH3, and AsH3 on the Si(001) surface. In agreement with previous studies, we find that the relative energetics of XH3 and XH2 species (X=N, P, As) are common across all three systems. In contrast, the energetics of the onward dissociation into XH and X species differs markedly between nitrogen on the one hand, and phosphorus and arsenic on the other.

引用

页数：4

共 50 条

[31] ON HYDRIDE REORIENTATION IN GROUP-V METALS
OWEN, CV
SPITZIG, WA
MATERIALS SCIENCE AND ENGINEERING, 1986, 78 (02): : L15 - L16
[32] Chemical trend of the formation energies of the group-III and group-V dopants in Si quantum dots
Ma, Jie
Wei, Su-Huai
PHYSICAL REVIEW B, 2013, 87 (11)
[33] Tip-induced β -hydrogen dissociation in an alkyl group bound on Si(001)
Adamkiewicz, A.
Bohamud, T.
Reutzel, M.
Hoefer, U.
Durr, M.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2021, 33 (34)
[34] The molecular basis of phosphatidylcholine preference of human group-V phospholipase A2
Kim, KP
Han, SK
Hong, M
Cho, W
BIOCHEMICAL JOURNAL, 2000, 348 : 643 - 647
[35] DISPLACEMENT OF GROUP-III, GROUP-IV, GROUP-V, AND GROUP-VI IMPURITIES IN SI BY ANALYZING BEAM
WIGGERS, LW
SARIS, FW
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 399 - 404
[36] Adsorption and dissociation of phosphine on Si(001)
Shan, J
Wang, YJ
Hamers, RJ
JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (12): : 4961 - 4969
[37] Phosphine dissociation on the Si(001) surface
Wilson, HF
Warschkow, O
Marks, NA
Schofield, SR
Curson, NJ
Smith, PV
Radny, MW
McKenzie, DR
Simmons, MY
PHYSICAL REVIEW LETTERS, 2004, 93 (22)
[38] GROUP-V ALLERGENS IN GRASS POLLENS .2. INVESTIGATION OF GROUP-V ALLERGENS IN POLLENS FROM 10 GRASSES
MATTHIESEN, F
LOWENSTEIN, H
CLINICAL AND EXPERIMENTAL ALLERGY, 1991, 21 (03): : 309 - 320
[39] Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge
V. V. Emtsev
N. V. Abrosimov
V. V. Kozlovski
D. S. Poloskin
G. A. Oganesyan
Semiconductors, 2018, 52 : 1677 - 1685
[40] Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants
Xu, Qiang
Luo, Jun-Wei
Li, Shu-Shen
Xia, Jian-Bai
Li, Jingbo
Wei, Su-Huai
PHYSICAL REVIEW B, 2007, 75 (23):

← 1 2 3 4 5 →