ELECTROPHONON RESONANCE IN DOPED SEMICONDUCTOR SUPERLATTICES

被引：3

作者：

Tran Cong Phong ^{[1
,4
]}

Vo Thanh Lam ^{[2
]}

Bui Dinh Hoi ^{[3
]}

机构：

[1] Natl Educ Union Vietnam, Hanoi, Vietnam

[2] Sai Gon Univ, Dept Nat Sci, Ho Chi Minh City, Vietnam

[3] Natl Univ Civil Engn, Hanoi, Vietnam

[4] Hue Univ, Coll Educ, Hue, Vietnam

来源：

MODERN PHYSICS LETTERS B | 2011年 / 25卷 / 12-13期

关键词：

Electrophonon resonance; doped semiconductor superlattice; electron-phonon interaction; quantum kinetic equation; absorption coefficient; MAGNETOPHONON RESONANCES; PHONON INTERACTION; QUANTUM WIRES; WELLS;

D O I：

10.1142/S0217984911026802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrophonon resonance (EPR) effect in doped semiconductor superlattices (DSSL) are investigated by using the quantum kinetic equation (QKE) for electrons to obtain the general analytic expression for optical absorption coefficient. We also obtain an EPR condition as a function of the photon energy and plasma energy. In particular, anomalous behaviors of the EPR effect such as the splitting of EPR peaks for incident photon energy or plasma energy are discussed. This raises a possibility of detecting electric subbands in DSSLs experimentally by utilizing EPR effects.

引用

页码：1093 / 1100

页数：8

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