Incommensurate Mott insulator in one-dimensional electron systems close to quarter filling

被引：8

作者：

Yoshioka, H ^{[1
]}

Seo, H

Fukuyama, H

机构：

[1] Nara Womens Univ, Dept Phys, Nara 6308506, Japan

[2] CO KEK, ERATO, JST, Non Equilibrium Dynam Project, Tsukuba, Ibaraki 3050801, Japan

[3] Tohoku Univ, IMR, IFCAM, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2005年 / 74卷 / 07期

关键词：

Mott insulator; incommensurate potential; organic conductors; metal-insulator transition;

D O I：

10.1143/JPSJ.74.1922

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The possibility of metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2 : I based on the one-dimensional extended Hubbard model, where donor carriers are slightly deviated from quarter filling and under an incommensurate periodic potential from anions. By the renormalization group method, the interplay between commensurability energy on the donor lattice and that from the anion potential has been studied and it has been found that an "incommensurate Mott insulator" can be generated. This theoretical finding will qualitatively explain the appearance of the insulating state in a two-dimensional material with an incommensurate

引用

页码：1922 / 1925

页数：4

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