Undamped self-oscillations in a compensated semiconductor under conditions of impurity breakdown in the presence of a magnetic field

被引：4

作者：

Jandieri, KM ^{[1
]}

Kachlishvili, ZS ^{[1
]}

机构：

[1] Tbilisi State Univ, GE-380086 Tbilisi, Georgia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 08期

关键词：

Magnetic Field; Impurity Breakdown;

D O I：

10.1134/1.1261780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conditions for the generation of undamped self-oscillations in a compensated semiconductor in the presence of a magnetic field are studied. (C) 1997American Institute of Physics. [S1063-7850(97)02908-X].

引用

页码：643 / 644

页数：2

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